EMP112 updated 02/06/2006 5. 0 ? 7.2 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2006 dimension: 2.65mm x 2.0mm thickness: 85um + 15um features ? 5.0 ? 7.2 ghz operating frequency range ? 30.0dbm output power at 1db compression ? 20.0 db typical small signal gain ? -41dbc oimd3 @each tone pout 20 dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics ( tb = 25 c, 50 ohm, vds = 7 v, idsq = 800 ma, unless otherwise specified ) symbol parameter/test conditions min typ max units f operating frequency range 5.0 7.2 ghz p1db output power at 1db gain compression 29.0 30.0 dbm gss small signal gain 17.0 20.0 db oimd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 20dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -5 db idss saturated drain current vds =3v, v gs =0v 980 1140 1350 ma vds drain to source voltage 7 8 v nf noise figure @6ghz 8 db rth thermal resistance (au-sn eutectic attach) 11 o c/w tb operating base plate temperature - 35 + 85 oc maximum ratings at 25c 1,2 symbol characteristic absolute continuous vds drain to source voltage 12v 8 v v gs gate to source voltage -8v - 4 v ids drain current idss 1300ma i gsf forward gate current 114ma 19 ma p in input power 27dbm @ 3db compression t ch channel temperature 175c 150c t stg storage temperature -65/175c -65/150c p t total power dissipation 12.4w 10.4w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation vds*ids < (t ch ?tb)/r th
EMP112 updated 02/06/2006 5. 0 ? 7.2 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2006 typical performance: 1. small signal performance (@7v, 800ma) 4 5 6 7 8 9 frequency (ghz) EMP112 small signal performance -25 -20 -15 -10 -5 0 5 10 15 20 25 db(|s[2,1]|) * db(|s[1,1]|) * db(|s[2,2]|) * 2. oimd vs pout @7v, 800ma (@8ghz, ? f=10mhz) 3. p-1 vs vds @idsq=800ma EMP112 oimd (dbc) vs. pout(dbm) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 each tone pout (dbm) oimd (dbc) oimd3 oimd5 EMP112 p1db(dbm) vs. vds 25 26 27 28 29 30 31 32 33 45678 frequency (ghz) dbm vds=8v vds=7v application information (caution: this is an esd sensitive device) chip carrier should match gaas thermal coe fficienat of expansion and have high ther mal conductivity, such as copper tungsten or copper molybdenum. the chip carrier should be nickel-gold plated and capable of withstanding 325oc for 20 minutes. die attach should be done with gold/tin (80/20) eutectic alloy in inert ambient gas. the backside is used as heatsinking, dc, and rf contacts. all die attach and wire bond equipment, especially the tool s which touch a die, should be well grounded to avoid accidental discharge through a die.
EMP112 updated 02/06/2006 5. 0 ? 7.2 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2006 assembly drawing the length of rf wires should be as short as possible. use at least two wires between rf pad and 50 ohm line and separate the wires to minimize the mutual inductance. chip size 2650 x 2000 microns chip thickness: 85 15 microns pad dimensions: 100 x 100 microns all dimensions in microns chip outline
|
